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參數(shù)資料
| 型號(hào)： | K6T1008C2E-TF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 128Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 128Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 190K |
| 代理商： | K6T1008C2E-TF70 |
CMOS SRAM
K6T1008C2E Family
Revision 3.0
March 2000
3
PRODUCT LIST
Commercial Temperature Products(0~70
°
C)
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
Part Name
Function
K6T1008C2E-DL55
K6T1008C2E-DL70
K6T1008C2E-DB55
K6T1008C2E-DB70
K6T1008C2E-GL55
K6T1008C2E-GL70
K6T1008C2E-GB55
K6T1008C2E-GB70
K6T1008C2E-TB55
K6T1008C2E-TB70
K6T1008C2E-RB55
K6T1008C2E-RB70
32-DIP, 55ns, Low Power
32-DIP, 70ns, Low Power
32-DIP, 55ns, Low Low Power
32-DIP, 70ns, Low Low Power
32-SOP, 55ns, Low Power
32-SOP, 70ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Low Power
32-TSOP F, 55ns, Low Low Power
32-TSOP F, 70ns, Low Low Power
32-TSOP R, 55ns, Low Low Power
32-TSOP R, 70ns, Low Low Power
K6T1008C2E-GP55
K6T1008C2E-GP70
K6T1008C2E-GF55
K6T1008C2E-GF70
K6T1008C2E-TF55
K6T1008C2E-TF70
K6T1008C2E-RF55
K6T1008C2E-RF70
32-SOP, 55ns, Low Power
32-SOP, 70ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Low Power
32-TSOP F, 55ns, Low Low Power
32-TSOP F, 70ns, Low Low Power
32-TSOP R, 55ns, Low Low Power
32-TSOP R, 70ns, Low Low Power
FUNCTIONAL DESCRIPTION
1. X means don
′
t care (Must be in high or low states)
CS
1
CS
2
OE
WE
I/O
Mode
Power
H
X
1)
L
X
1)
X
1)
High-Z
Deselected
Standby
X
1)
L
X
1)
H
X
1)
H
High-Z
Deselected
Standby
H
High-Z
Output Disabled
Active
L
H
L
H
Dout
Read
Active
L
H
X
1)
L
Din
Write
Active
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to 7.0
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.5 to 7.0
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
K6T1008C2E-L/-B
-40 to 85
K6T1008C2E-P/-F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T1008C2E-TF70T00 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 70ns 32-Pin TSOP-I T/R |
| K6T1008U2C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T1008U2C-B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T1008U2C-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T1008U2C-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x8 bit Low Power and Low Voltage CMOS Static RAM |
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