- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄358026 > K6T1008C2E-TB70 (SAMSUNG SEMICONDUCTOR CO. LTD.) 128Kx8 bit Low Power CMOS Static RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | K6T1008C2E-TB70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 128Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 128Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大?。?/td> | 190K |
| 代理商： | K6T1008C2E-TB70 |
CMOS SRAM
K6T1008C2E Family
Revision 3.0
March 2000
8
DATA RETENTION WAVE FORM
CS
1
controlled
V
CC
4.5V
2.2V
V
DR
CS
1
GND
Data Retention Mode
CS
≥
V
CC
- 0.2V
t
SDR
t
RDR
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS
2
Controlled)
Address
CS
1
t
AW
NOTES
(WRITE CYCLE)
1. A write occurs during the overlap of a low CS
1
, a high CS
2
and a low WE. A write begins at the latest transition among CS
1
goes low,
CS
2
going high and WE going low: A write end at the earliest transition among CS
1
going high, CS
2
going low and WE going high,
t
WP
is measured from the begining of write to the end of write.
2. t
CW
is measured from the CS
1
going low or CS
2
going high to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4. t
WR
is measured from the end of write to the address change. t
WR1
applied in case a write ends as CS
1
or WE going high t
WR2
applied
in case a write ends as CS
2
going to low.
CS
2
t
CW(2)
WE
Data in
Data Valid
Data out
High-Z
High-Z
t
CW(2)
t
WR(4)
t
WP(1)
t
DW
t
DH
t
AS(3)
t
WC
CS
2
controlled
V
CC
4.5V
CS
2
0.4V
GND
V
DR
Data Retention Mode
t
SDR
t
RDR
CS
2
≤
0.2V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6T1008C2E | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-RF70 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-B | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DB55 | 128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-DB70 | 128Kx8 bit Low Power CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6T1008C2E-TF55 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-TF70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM |
| K6T1008C2E-TF70T00 | 制造商:Samsung SDI 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 70ns 32-Pin TSOP-I T/R |
| K6T1008U2C | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128K x8 bit Low Power and Low Voltage CMOS Static RAM |
| K6T1008U2C-B | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128K x8 bit Low Power and Low Voltage CMOS Static RAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。