參數(shù)資料
型號(hào): K6T1008C2E-DB55
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類: DRAM
英文描述: 128Kx8 bit Low Power CMOS Static RAM
中文描述: 128Kx8位低功耗CMOS靜態(tài)RAM
文件頁數(shù): 3/10頁
文件大?。?/td> 190K
代理商: K6T1008C2E-DB55
CMOS SRAM
K6T1008C2E Family
Revision 3.0
March 2000
3
PRODUCT LIST
Commercial Temperature Products(0~70
°
C)
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
Part Name
Function
K6T1008C2E-DL55
K6T1008C2E-DL70
K6T1008C2E-DB55
K6T1008C2E-DB70
K6T1008C2E-GL55
K6T1008C2E-GL70
K6T1008C2E-GB55
K6T1008C2E-GB70
K6T1008C2E-TB55
K6T1008C2E-TB70
K6T1008C2E-RB55
K6T1008C2E-RB70
32-DIP, 55ns, Low Power
32-DIP, 70ns, Low Power
32-DIP, 55ns, Low Low Power
32-DIP, 70ns, Low Low Power
32-SOP, 55ns, Low Power
32-SOP, 70ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Low Power
32-TSOP F, 55ns, Low Low Power
32-TSOP F, 70ns, Low Low Power
32-TSOP R, 55ns, Low Low Power
32-TSOP R, 70ns, Low Low Power
K6T1008C2E-GP55
K6T1008C2E-GP70
K6T1008C2E-GF55
K6T1008C2E-GF70
K6T1008C2E-TF55
K6T1008C2E-TF70
K6T1008C2E-RF55
K6T1008C2E-RF70
32-SOP, 55ns, Low Power
32-SOP, 70ns, Low Power
32-SOP, 55ns, Low Low Power
32-SOP, 70ns, Low Low Power
32-TSOP F, 55ns, Low Low Power
32-TSOP F, 70ns, Low Low Power
32-TSOP R, 55ns, Low Low Power
32-TSOP R, 70ns, Low Low Power
FUNCTIONAL DESCRIPTION
1. X means don
t care (Must be in high or low states)
CS
1
CS
2
OE
WE
I/O
Mode
Power
H
X
1)
L
X
1)
X
1)
High-Z
Deselected
Standby
X
1)
L
X
1)
H
X
1)
H
High-Z
Deselected
Standby
H
High-Z
Output Disabled
Active
L
H
L
H
Dout
Read
Active
L
H
X
1)
L
Din
Write
Active
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to 7.0
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.5 to 7.0
V
-
Power Dissipation
P
D
1.0
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
K6T1008C2E-L/-B
-40 to 85
K6T1008C2E-P/-F
相關(guān)PDF資料
PDF描述
K6T1008C2E-DB70 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-DL55 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-DL70 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-F 128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-GB55 128Kx8 bit Low Power CMOS Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6T1008C2E-DB70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-DL55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-DL70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM
K6T1008C2E-GB55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Low Power CMOS Static RAM