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參數(shù)資料
| 型號： | K6R4016V1D-JC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges |
| 中文描述： | 1Mx4位高速靜態(tài)RAM（3.3V的）。在商用和工業(yè)溫度范圍運營 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 218K |
| 代理商： | K6R4016V1D-JC |
K6R4004V1D
CMOS SRAM
PRELIMINARY
Rev 2.0
July 2004
- 1 -
Document Title
1Mx4 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev. 0.1
Rev. 1.0
Rev. 0.3
Rev. 1.0
Rev. 2.0
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
History
Initial release with Preliminary.
Add Low Ver.
Change Icc, Isb and Isb1
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
1. Delete 12ns,15ns speed bin.
2. Change Icc for Industrial mode.
Item
1. Add the Lead Free Package type.
Item
Previous
110mA
90mA
80mA
70mA
130mA
115mA
100mA
85mA
30mA
0.5mA
Current
80mA
65mA
55mA
45mA
100mA
85mA
75mA
65mA
20mA
1.2mA
I
CC(Commercial)
8ns
10ns
12ns
15ns
8ns
10ns
12ns
15ns
I
CC(Industrial)
I
SB
I
SB1(L-ver.)
Previous
100mA
85mA
Current
90mA
75mA
I
CC(Industrial)
8ns
10ns
Draft Data
Aug. 20. 2001
Sep. 19. 2001
Nov. 3. 2001
Nov.23. 2001
Dec.18. 2001
July. 26, 2004
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