參數(shù)資料
型號: K6R4008V1B-C15
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: CMOS SRAM
中文描述: CMOS SRAM的
文件頁數(shù): 4/10頁
文件大小: 214K
代理商: K6R4008V1B-C15
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
CMOS SRAM
PRELIMINARY
Rev 2.2
May 1999
- 4 -
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70
°
C, Vcc=3.3
±
0.3V, unless otherwise specified)
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
μ
A
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or
V
IL,
I
OUT
=0mA
10ns
-
205
mA
12ns
-
200
15ns
-
195
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
50
mA
I
SB1
f=0MHz, CS
V
CC
-0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
Normal
-
10
mA
L-Ver.
-
1.2
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
CAPACITANCE*
(T
A
=25
°
C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
7
pF
RECOMMENDED DC OPERATING CONDITIONS*
(T
A
=0 to 70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
** V
IL
(Min) = -2.0V a.c(Pulse Width
8ns) for I
20mA.
*** V
IH
(Max) = V
CC +
2.0V a.c (Pulse Width
8ns) for I
20mA.
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
3.0
3.3
3.6
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3***
V
Input Low Voltage
V
IL
-0.3**
-
0.8
V
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