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參數(shù)資料
| 型號(hào)： | K6R4004C1C-C10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx4 Bit High Speed Static RAM(5V Operating). |
| 中文描述： | 1Mx4位高速靜態(tài)RAM（5V的工作）。 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 155K |
| 代理商： | K6R4004C1C-C10 |
K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E
CMOS SRAM
PRELIMINARY
Rev 3.0
- 2 -
March 2000
1M x 4 Bit (with OE)High-Speed CMOS Static RAM
GENERAL DESCRIPTION
The K6R4004C1C is a 4,194,304-bit high-speed Static Random
Access Memory organized as 1,048,576 words by 4 bits. The
K6R4004C1C uses 4 common input and output lines and has
an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNG
′
s advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density
high-speed
K6R4004C1C is packaged in a 400 mil 32-pin plastic SOJ.
FEATURES
Fast Access Time 10,12,15,20ns(Max.)
Low Power Dissipation
Standby (TTL) : 60mA(Max.)
(CMOS) : 10mA(Max.)
Operating K6R4004C1C-10 : 160mA(Max.)
K6R4004C1C-12 : 150mA(Max.)
K6R4004C1C-15 : 140mA(Max.)
K6R4004C1C-20 : 130mA(Max.)
Single 5.0V
±
10% Power Supply
TTL Compatible Inputs and Outputs
I/O Compatible with 3.3V Device
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Standard Pin Configuration
K6R4004C1C-J : 32-SOJ-400
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
19
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O
1
~ I/O
4
Data Inputs/Outputs
V
CC
Power(+5.0V)
V
SS
Ground
N.C
No Connection
system
applications.
The
PIN CONFIGURATION
(Top View)
SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
19
A
18
A
17
A
16
A
15
OE
I/O
4
Vss
Vcc
I/O
3
A
14
A
13
A
12
A
11
A
10
N.C
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
Vcc
Vss
I/O
2
WE
A
5
A
6
A
7
A
8
A
9
K6R4004C1C-C10/C12/C15/C20
Commercial Temp.
K6R4004C1C-E10/E12/E15/E20
Extended Temp.
K6R4004C1C-I10/I12/I15/I20
Industrial Temp.
ORDERING INFORMATION
Clk Gen.
I/O
1
~I/O
4
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
1024 Rows
1024 x 4 Columns
I/O Circuit
A
10
A
12
A
14
A
16
A
18
A
11
A
13
A
15
A
17
A
19
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R4004C1C-C12 | 1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1D-JC | 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges |
| K6R4004V1D-JKCI | 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges |
| K6R4008C1D | 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges |
| K6R4008C1D-JC | 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R4004C1C-C12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-C15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-C20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5V Operating). |
| K6R4004C1C-E10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5V Operating). |
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