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參數(shù)資料
| 型號(hào)： | K6R3024V1D-HC09 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| 中文描述： | 128K的× 24位高速CMOS靜態(tài)RAM（3.3V的工作） |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | K6R3024V1D-HC09 |
K6R3024V1D
CMOS SRAM
Revision 1.0
December 2001
- 9 -
for AT&T
0.750
±
0.15
1.27
1.27
12.50
±
0.10
0.60
±
0.10
0.60
±
0.10
1.50REF
C1.00
C0.70
14.00
±
0.10
22.00
±
0.10
20.50
±
0.10
NOTE
:
1. All Dimensions are in Millimeters.
2. Solder Ball to PCB Offset : 0.10 MAX.
3. PCB to Cavity Offset : 0.10 MAX.
Indicator of
Ball(1A) Location
119 BGA PACKAGE DIMENSIONS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R3024V1D-HC10 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC12 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI09 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R4008V1B | CMOS SRAM |
| K6R4008V1B-C10 | CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R3024V1D-HC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
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