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參數(shù)資料
| 型號(hào)： | K6R1016V1D-UI10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| 中文描述： | 256Kx4位（與OE）的高速CMOS靜態(tài)RAM（5.0V操作）。 |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大小： | 307K |
| 代理商： | K6R1016V1D-UI10 |
K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
CMOS SRAM
Revision 3.3
October 2000
- 7 -
for AT&T
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS=Controlled)
Address
CS
t
AW
t
DW
t
DH
Valid Data
WE
Data in
Data out
High-Z
High-Z(8)
UB, LB
t
CW(3)
t
WP(2)
t
AS(4)
t
WC
t
WR(5)
High-Z
High-Z
t
LZ
t
WHZ(6)
t
BW
TIMING WAVEFORM OF WRITE CYCLE(2)
(OE =Low fixed)
Address
CS
UB, LB
WE
Data in
Data out
t
WC
t
CW(3)
t
BW
t
WP1(2)
t
DH
t
DW
t
WR(5)
t
AS(4)
t
OW
t
WHZ(6)
(10)
(9)
High-Z
Valid Data
t
AW
High-Z
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| K6R1016V1C-I20 | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-EC08 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016V1D-EC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016V1D-EI08 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016V1D-EI10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R3024V1D | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC09 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC12 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI09 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
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