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參數(shù)資料
| 型號： | K6R1016V1D-UC10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| 中文描述： | 64Kx16位高速CMOS靜態(tài)RAM（3.3V的）在商業(yè)和工業(yè)溫度范圍操作。 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 307K |
| 代理商： | K6R1016V1D-UC10 |
K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
CMOS SRAM
Revision 3.3
October 2000
- 2 -
for AT&T
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)
FEATURES
Fast Access Time 10,12,15,20ns(Max.)
Low Power Dissipation
Standby (TTL) : 30mA(Max.)
(CMOS) : 5mA(Max.)
0.5mA(Max.) L-ver. only
Operating
*
K6R1016V1C-10: 105mA(Max.)
K6R1016V1C-12: 95mA(Max.)
K6R1016V1C-15: 93mA(Max.)
K6R1016V1C-20: 90mA(Max.)
Single 3.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
2V Minimum Data Retention: L-ver. only
Center Power/Ground Pin Configuration
Data Byte Control: LB: I/O
1
~ I/O
8
, UB: I/O
9
~ I/O
16
Standard Pin Configuration:
K6R1016V1C-J: 44-SOJ-400
K6R1016V1C-T: 44-TSOP2-400BF
K6R1016V1C-F: 48-Fine pitch BGA with 0.75 Ball pitch
The K6R1016V1C is a 1,048,576-bit high-speed Static Random
Access Memory organized as 65,536 words by 16 bits. The
K6R1016V1C uses 16 common input and output lines and has
at output enable pin which operates faster than address access
time at read cycle. Also it allows that lower and upper byte
access by data byte control (UB, LB). The device is fabricated
using SAMSUNG
′
s advanced CMOS process and designed for
high-speed circuit technology. It is particularly well suited for
use in high-density high-speed system applications. The
K6R1016V1C is packaged in a 400mil 44-pin plastic SOJ or
TSOP2 forward or 48-Fine pitch BGA.
GENERAL DESCRIPTION
Clk Gen.
I/O
1
~I/O
8
OE
UB
LB
CS
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Data
Cont.
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
CLK
Gen
.
Pre-Charge Circuit
Memory Array
512 Rows
128x16 Columns
I/O Circuit &
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
I/O
9
~I/O
16
WE
K6R1016V1C-C10/C12/C15/C20
Commercial Temp.
K6R1016V1C-I10/I12/I15/I20
Industrial Temp.
ORDERING INFORMATION
A
9
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
15
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
LB
Lower-byte Control(I/O
1
~I/O
8
)
UB
Upper-byte Control(I/O
9
~I/O
16
)
I/O
1
~ I/O
16
Data Inputs/Outputs
V
CC
Power(+3.3V)
V
SS
Ground
N.C
No Connection
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| K6R1016V1D-KI10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016V1D-JI10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1016V1C | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-JC10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1016V1D-UI08 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-UI08/10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R1016V1D-UI10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
| K6R3024V1D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
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