參數(shù)資料
型號(hào): K6R1016V1D-KI10
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
中文描述: 256Kx4位(與OE)的高速CMOS靜態(tài)RAM(5.0V操作)。
文件頁數(shù): 7/11頁
文件大?。?/td> 307K
代理商: K6R1016V1D-KI10
K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
CMOS SRAM
Revision 3.3
October 2000
- 7 -
for AT&T
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS=Controlled)
Address
CS
t
AW
t
DW
t
DH
Valid Data
WE
Data in
Data out
High-Z
High-Z(8)
UB, LB
t
CW(3)
t
WP(2)
t
AS(4)
t
WC
t
WR(5)
High-Z
High-Z
t
LZ
t
WHZ(6)
t
BW
TIMING WAVEFORM OF WRITE CYCLE(2)
(OE =Low fixed)
Address
CS
UB, LB
WE
Data in
Data out
t
WC
t
CW(3)
t
BW
t
WP1(2)
t
DH
t
DW
t
WR(5)
t
AS(4)
t
OW
t
WHZ(6)
(10)
(9)
High-Z
Valid Data
t
AW
High-Z
相關(guān)PDF資料
PDF描述
K6R1016V1D-JI10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1C 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1D-JC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1D-JI08 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1D-UI08 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R1016V1D-TC08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1D-TC08/10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1D-TC10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1D-TI08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1016V1D-TI08/10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.