參數(shù)資料
型號： K6R1016V1D-EI10
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
中文描述： 256Kx4位（與OE）的高速CMOS靜態(tài)RAM（5.0V操作）。
文件頁數(shù)： 5/11頁
文件大?。?/td> 307K
代理商： K6R1016V1D-EI10
K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
CMOS SRAM
Revision 3.3
October 2000
- 5 -
for AT&T
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1016V1C-10
K6R1016V1C-12
K6R1016V1C-15
K6R1016V1C-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
10
-
12
-
15
-
20
-
ns
Chip Select to End of Write
t
CW
7
-
8
-
9
-
10
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
7
-
8
-
9
-
10
-
ns
Write Pulse Width(OE High)
t
WP
7
-
8
-
9
-
10
-
ns
Write Pulse Width(OE Low)
t
WP1
10
-
12
-
15
-
20
-
ns
UB, LB Valid to End of Write
t
BW
7
-
8
-
9
-
10
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
5
0
6
0
7
0
9
ns
Data to Write Time Overlap
t
DW
5
-
6
-
7
-
8
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
3
-
ns
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1016V1C-10
K6R1016V1C-12
K6R1016V1C-15
K6R1016V1C-20
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
10
-
12
-
15
-
20
-
ns
Address Access Time
t
AA
-
10
-
12
-
15
-
20
ns
Chip Select to Output
t
CO
-
10
-
12
-
15
-
20
ns
Output Enable to Valid Output
t
OE
-
5
-
6
-
7
-
9
ns
UB, LB Access Time
t
BA
-
5
-
6
-
7
-
9
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
3
-
ns
UB, LB Enable to Low-Z Output
t
BLZ
0
-
0
-
0
-
0
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
5
0
6
-
7
-
9
ns
Output Disable to High-Z Output
t
OHZ
0
5
0
6
-
7
-
9
ns
UB, LB Disable to High-Z Output
t
BHZ
0
5
0
6
-
7
-
9
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
0
-
0
-
ns
Chip Selection to Power DownTime
t
PD
-
10
-
12
-
15
-
20
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB, LB=V
IL
t
AA
t
RC
t
OH
相關PDF資料
PDF描述
K6R1016V1D-UC08 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R3024V1D 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
K6R3024V1D-HI10 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
K6R3024V1D-HI12 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
K6R3024V1D-HC09 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
相關代理商/技術參數(shù)
參數(shù)描述
K6R1016V1D-JC08 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1D-JC08/10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1D-JC10 制造商:Samsung Semiconductor 功能描述:Static RAM, 64Kx16, 44 Pin, Plastic, SOJ
K6R1016V1D-JC10000 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 10ns 44-Pin SOJ Tube
K6R1016V1D-JECI08/10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
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