參數(shù)資料
型號: K6R1016V1C-C15
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
中文描述: 64Kx16位高速CMOS靜態(tài)RAM(3.3V的)在商業(yè)和工業(yè)溫度范圍操作。
文件頁數(shù): 4/11頁
文件大?。?/td> 307K
代理商: K6R1016V1C-C15
K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
CMOS SRAM
Revision 3.3
October 2000
- 4 -
for AT&T
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, Vcc=3.3V+0.3V/-0.15V, unless otherwise noted.)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
319
353
+3.3V
* Including Scope and Jig Capacitance
Output Loads(A)
D
OUT
R
L
= 50
Z
O
= 50
V
L
= 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
CAPACITANCE*
(T
A
=25
°
C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
*
DC AND OPERATING CHARACTERISTICS*
(
T
A
=0 to 70
°
C, Vcc=3.3V+0.3V/-0.15V, unless otherwise specfied)
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
μ
A
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
= V
IH
or
V
IL,
I
OUT
=0mA
10ns
-
105
mA
12ns
-
95
15ns
-
93
20ns
-
90
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
30
mA
I
SB1
f=0MHz, CS
V
CC
-0.2V,
V
IN
V
CC
-0.2V or V
IN
0.2V
Normal
-
5
mA
L-Ver.
-
0.5
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
相關(guān)PDF資料
PDF描述
K6R1016V1C-C20 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1C-I10 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1C-I12 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1C-I15 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1D-TI10 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R1016V1C-C20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1C-I10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1C-I12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1C-I15 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016V1C-I20 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.