參數(shù)資料
型號： K6R1008V1B-I8
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
中文描述： 128Kx8位高速靜態(tài)RAM（3.3V的工作），革命銷出。在商用和工業(yè)溫度范圍運(yùn)營
文件頁數(shù)： 4/9頁
文件大?。?/td> 184K
代理商： K6R1008V1B-I8
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
CMOS SRAM
PRPreliminary
Rev 2.1
- 4 -
August 1998
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1008V1B-8
K6R1008V1B-10
K6R1008V1B-12
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
t
RC
8
-
10
-
12
-
ns
Address Access Time
t
AA
-
8
-
10
-
12
ns
Chip Select to Output
t
CO
-
8
-
10
-
12
ns
Output Enable to Valid Output
t
OE
-
4
-
5
-
6
ns
Chip Enable to Low-Z Output
t
LZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
t
OLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
t
HZ
0
4
0
5
0
6
ns
Output Disable to High-Z Output
t
OHZ
0
4
0
5
0
6
ns
Output Hold from Address Change
t
OH
3
-
3
-
3
-
ns
Chip Selection to Power Up Time
t
PU
0
-
0
-
0
-
ns
Chip Selection to Power DownTime
t
PD
-
8
-
10
-
12
ns
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS
(T
A
=0 to 70
°
C, V
CC
=3.3
±
0.3V, unless otherwise noted.)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
D
OUT
5pF*
319
353
+3.3V
* Including Scope and Jig Capacitance
Output Loads(A)
D
OUT
R
L
= 50
Z
O
= 50
V
L
= 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
相關(guān)PDF資料
PDF描述
K6R1008V1D 64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
K6R1008V1D-J(T)C(I)08 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008V1D-J(T)C(I)10 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016C1 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1016C1D 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R1008V1B-I-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
K6R1008V1C-C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
K6R1008V1C-C10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
K6R1008V1C-C12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High-Speed CMOS Static RAM(3.3V Operating).
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