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參數(shù)資料
| 型號： | K6R1008V1B-C10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| 中文描述： | 128Kx8位高速靜態(tài)RAM（3.3V的工作），革命銷出。在商用和工業(yè)溫度范圍運(yùn)營 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 184K |
| 代理商： | K6R1008V1B-C10 |
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
CMOS SRAM
PRPreliminary
Rev 2.1
- 5 -
August 1998
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1008V1B-8
K6R1008V1B-10
K6R1008V1B-12
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
8
-
10
-
12
-
ns
Chip Select to End of Write
t
CW
6
-
7
-
8
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
6
-
7
-
8
-
ns
Write Pulse Width(OE High)
t
WP
6
-
7
-
8
-
ns
Write Pulse Width(OE Low)
t
WP1
8
-
10
-
12
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
4
0
5
0
6
ns
Data to Write Time Overlap
t
DW
4
-
5
-
6
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
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| K6R1008V1B-I-P | 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-I10 | 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R1008V1B-C12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-C-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-I10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
| K6R1008V1B-I12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges |
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