參數(shù)資料
型號： K6R1008C1D-KC10
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： DRAM
英文描述： 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
中文描述： 256Kx4位（與OE）的高速CMOS靜態(tài)RAM（5.0V操作）。
文件頁數(shù)： 3/8頁
文件大小： 168K
代理商： K6R1008C1D-KC10
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
PRELIMINARY
Rev 4.0
- 3 -
February 1998
ABSOLUTE MAXIMUM RATINGS*
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to V
SS
V
IN
,
V
OUT
-0.5 to 7.0
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
-0.5 to 7.0
V
Power Dissipation
P
D
1.0
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
Commercial
T
A
0 to 70
Industrial
T
A
-40 to 85
RECOMMENDED DC OPERATING CONDITIONS*
(
T
A
=0 to 70
°
C)
* The above parameters are also guaranteed at industrial temperature range.
**
V
IL
(Min) = -2.0V a.c(Pulse Width
≤
10ns) for I
≤
20mA.
***
V
IH
(Max) = V
CC
+ 2.0V a.c (Pulse Width
≤
10ns) for I
≤
20mA.
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.2
-
V
CC
+ 0.5***
V
Input Low Voltage
V
IL
-0.5**
-
0.8
V
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70
°
C, Vcc=5.0V
±
10%, unless otherwise specified)
* The above parameters are also guaranteed at industrial temperature range.
** V
CC
=5.0V
±
5%, Temp.=25
°
C
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
μ
A
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to
V
CC
-2
2
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or
V
IL,
I
OUT
=0mA
12ns
-
170
mA
15ns
-
165
20ns
-
160
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
25
mA
I
SB1
f=0MHz, CS
≥
V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
-
8
mA
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
V
OH1
**
I
OH1
=-0.1mA
-
3.95
V
CAPACITANCE*
(T
A
=25
°
C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
6
pF
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R1008C1D-KI10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-TC10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-TI10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008C1D-UC10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-UI10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
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