參數(shù)資料
型號(hào)： K6R1008C1D-J(T)C(I)10
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類(lèi)： DRAM
英文描述： 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
中文描述： 在商業(yè)和工業(yè)溫度范圍運(yùn)作64Kx16位高速CMOS靜態(tài)RAM（3.3V的）。
文件頁(yè)數(shù)： 5/8頁(yè)
文件大?。?/td> 168K
代理商： K6R1008C1D-J(T)C(I)10
K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
PRELIMINARY
Rev 4.0
- 5 -
February 1998
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1008C1A-12
K6R1008C1A-15
K6R1008C1A-20
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
t
WC
12
-
15
-
20
-
ns
Chip Select to End of Write
t
CW
8
-
10
-
12
-
ns
Address Set-up Time
t
AS
0
-
0
-
0
-
ns
Address Valid to End of Write
t
AW
8
-
10
-
12
-
ns
Write Pulse Width(OE High)
t
WP
8
-
10
-
12
-
ns
Write Pulse Width(OE Low)
t
WP1
12
-
15
-
20
-
ns
Write Recovery Time
t
WR
0
-
0
-
0
-
ns
Write to Output High-Z
t
WHZ
0
6
0
7
0
9
ns
Data to Write Time Overlap
t
DW
6
-
7
-
9
-
ns
Data Hold from Write Time
t
DH
0
-
0
-
0
-
ns
End Write to Output Low-Z
t
OW
3
-
3
-
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
CS
Address
OE
Data ou
t
t
AA
t
OLZ
t
LZ(4,5)
t
OH
t
OHZ
t
RC
t
OE
t
CO
t
PU
t
PD
Valid Data
t
HZ(3,4,5)
50%
50%
V
CC
Current
I
CC
I
SB
相關(guān)PDF資料
PDF描述
K6R1008C1D-J(T)C(I)12 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1B-I10 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-KC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008C1D-UC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008C1D-KI10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6R1008C1D-JTCI10/12 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-KC10 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1008C1D-KI10 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-TC10 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
K6R1008C1D-TI10 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
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