參數(shù)資料
型號: K6F8016U6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 為512k x16位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁數(shù): 7/9頁
文件大小: 157K
代理商: K6F8016U6
K6F8016U6B Family
Revision 1.0
September 2001
7
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
WC
t
CW(2)
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AS(3)
CS
1
CS
2
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
Data Undefined
UB, LB
WE
Data in
Data out
t
WC
t
CW(2)
t
WR(4)
t
AW
t
BW
t
WP(1)
t
AS(3)
t
DH
t
DW
t
WHZ
t
OW
High-Z
High-Z
Data Valid
CS
2
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