- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373072 > K6F4016U4G (SAMSUNG SEMICONDUCTOR CO. LTD.) 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM PDF資料下載
參數(shù)資料
| 型號： | K6F4016U4G |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 256Kx16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 173K |
| 代理商： | K6F4016U4G |
Revision 0.0
October 2003
CMOS SRAM
K6F4016U4G Family
- 2 -
Preliminary
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Typical value is measured at V
CC
=3.0V, T
A
=25
°
C and not 100% tested.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Typ.)
Operating
(I
CC1
, Max)
K6F4016U4G-F
Industrial(-40~85
°
C)
2.7~3.3V
55
1)
/70ns
3
μ
A
2)
4mA
48-TBGA-6.00x7.00
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The K6F4016U4G families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families support
industrial temperature range and 48 ball Chip Scale Package
for user flexibility of system design. The family also supports
low data retention voltage for battery back-up operation with
low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 256K x16 bit
Power Supply Voltage: 2.7~3.3V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 48-TBGA-6.00x7.00
PIN DESCRIPTION
Name
Function
Name
Function
CS
Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
17
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
DNU
Do Not Use
FUNCTIONAL BLOCK DIAGRAM
48-TBGA: Top View (Ball Down)
LB
OE
A0
A1
A2
DNU
I/O9
UB
A3
A4
CS
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
DNU
A12
A13
WE
I/O8
DNU
A8
A9
A10
A11
DNU
1
2
3
4
5
6
A
B
C
D
E
F
G
H
Precharge circuit.
Memory
Cell
Array
I/O Circuit
Column select
Clk gen.
Row
select
WE
OE
UB
CS
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
LB
I/O
9
~I/O
16
Vcc
Vss
Row
Addresses
Control Logic
Column Addresses
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
DNU
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6F8016V3A | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016V3A-F | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6R1008C1A- | 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1B-C10 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
| K6R1008C1B-C12 | 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F4016U4G-EF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016U4G-EF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016U6G | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016U6G-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F8016R6B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。