參數(shù)資料
型號: K6F2016U4E
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 128K的x16位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁數(shù): 1/9頁
文件大?。?/td> 158K
代理商: K6F2016U4E
CMOS SRAM
K6F2016U4E Family
- 1 -
Revision 2.0
September 2001
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Document Title
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
1.0
2.0
Remark
Preliminary
Final
Final
History
Initial Draft
Finalize
- Change I
CC2
from 21 to 26mA for 55ns product.
- Change I
CC2
from 17 to 20mA for 70ns product.
- Remove "A1 Index Mark" of 48-TBGA package bottom side
Revise
- Changed 48-TBGA vertical dimension
E1(Typical) 0.55mm to 0.58mm
E2(Typical) 0.35mm to 0.32mm
Draft Date
February 21, 2001
April 30, 2001
September 27, 2001
相關(guān)PDF資料
PDF描述
K6F2016U4E-F 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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K6F2016V4E-EF55 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6F2016U4E-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2016U4G 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mb(128K x 16 bit) Low Power SRAM
K6F2016U4G-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mb(128K x 16 bit) Low Power SRAM
K6F2016U4G-FF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mb(128K x 16 bit) Low Power SRAM
K6F2016U4G-FF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mb(128K x 16 bit) Low Power SRAM