參數(shù)資料
型號: K6F2008U2E-EF55
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 256Kx8位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁數(shù): 1/10頁
文件大小: 175K
代理商: K6F2008U2E-EF55
Revision 2.0
April 2002
CMOS SRAM
K6F2008U2E Family
1
Document Title
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision No.
0.0
1.0
2.0
Remark
Preliminary
Final
Final
History
Initial Draft
Finalize
Revise
- Added 48(36)-TBGA-6.00x7.00 products.
Draft Date
February 28, 2001
September 27, 2001
April 30, 2002
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K6F2008U2E-EF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008V2E 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008V2E-LF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM