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參數(shù)資料
| 型號(hào)： | K6F1616R6C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 100萬(wàn)x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 153K |
| 代理商： | K6F1616R6C |
K6F1616R6C Family
Revision 1.0
May 2004
1
CMOS SRAM
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
Remark
Preliminary
Preliminary
Final
History
Initial draft
Revised
- Changed ball name of E3 (Vss) & H6 (DNU) to NC.
- Deleted 85ns Speed bin.
Finalize
- Deleted 55ns Speed bin.
Draft Date
November 17, 2003
November 21, 2003
May 24, 2004
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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| K6F1616R6C-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| K6F1616T6B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-EF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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