參數(shù)資料
型號(hào): K6F1008V2C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128*8 bit super low power and low voltage CMOS static RAM
中文描述: 128Kx8位超低功耗和低電壓的CMOS靜態(tài)RAM
文件頁(yè)數(shù): 7/9頁(yè)
文件大?。?/td> 126K
代理商: K6F1008V2C
CMOS SRAM
K6F1008V2C Family
Revision 1.0
June 2002
7
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
CS
1
t
WC
t
WR(4)
t
AS(3)
t
DW
t
DH
Data Valid
WE
Data in
Data out
High-Z
High-Z
CS
2
t
CW(2)
t
WP(1)
t
AW
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
t
CW(2)
t
WR(4)
CS
2
t
CW(2)
t
WP(1)
t
DW
t
DH
t
OW
t
WHZ
Data Undefined
Data Valid
WE
Data in
Data out
t
WC
t
AW
t
AS(3)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K6F1008V2C FAMILY 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K*8 bit super low power and low valtage CMOS static RAM
K6F1008V2C-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
K6F1008V2C-YF55 制造商:Samsung Semiconductor 功能描述:
K6F1008V2C-YF55000 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 55ns 32-Pin TSOP-I Tube
K6F1008V2C-YF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM