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參數(shù)資料
| 型號： | K6F1008V2C-YF55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | DRAM |
| 英文描述： | 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 128Kx8位超低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 126K |
| 代理商： | K6F1008V2C-YF55 |
CMOS SRAM
K6F1008V2C Family
Revision 1.0
June 2002
6
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS
1
=OE=V
IL
, CS
2
=WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
CS
1
Address
OE
Data ou
t
NOTES (
READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
CS
2
t
OH
t
AA
t
OLZ
t
LZ
t
OHZ
t
HZ(1,2)
t
RC
t
CO2
t
OE
t
CO1
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|---|---|
| K6F1008V2C-YF55000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 55ns 32-Pin TSOP-I Tube |
| K6F1008V2C-YF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
| K6F1016U4B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1016U4B-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1016U4B-FF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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