參數(shù)資料
型號(hào): K6E0808C1C-C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32Kx8 Bit High Speed CMOS Static RAM
中文描述: 32Kx8位高速CMOS靜態(tài)RAM
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 168K
代理商: K6E0808C1C-C
K6E0808C1C-C
CMOS SRAM
PRELIMINARY
Rev 4.0
- 1 -
February 1998
Document Title
32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Remark
Preliminary
Final
Final
Final
Final
History
Initial release with Preliminary.
Release to final Data Sheet.
1. Delete Preliminary
Update A.C parameters
2.1. Updated A.C parameters
2.2. Add V
OH1
=3.95V with the test condition as Vcc=5V
±
5% at 25
°
C
3.1. Add 28-TSOP1 Package.
3.2. Add L-version.
3.3. Add Data Rentention Characteristics.
4.1. Delete DIP Package.
4.2. Delete L-version.
4.3. Delete Data Retention Characteristics and Waveform.
Items
Previous spec.
(12/15/20ns part)
- / 8/10ns
- /12/ - ns
8/10/10ns
- / 8 / - ns
- / 9 / - ns
Updated spec.
(12/15/20ns part)
- / 7 /9 ns
- /11/ - ns
6/ 7/10ns
- / 7 / - ns
- / 8 / - ns
t
OE
t
CW
t
HZ
t
OHZ
t
DW
Draft Data
Apr. 1st, 1994
May 14th,1994
Oct. 4th, 1994
Feb. 22th, 1996
Feb. 25th, 1998
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