參數(shù)資料
型號(hào)： K5A3380YBC-T855
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MCP MEMORY
中文描述： MCP的記憶
文件頁(yè)數(shù)： 12/45頁(yè)
文件大?。?/td> 625K
代理商： K5A3380YBC-T855
MCP MEMORY
K5A3x80YT(B)C
Revision 0.0
November 2002
- 12 -
Preliminary
Figure 3. Autoselect Operation
WE
555H/
AAAH
2AAH/
555H
555H/
AAAH
AAH
55H
90H
00H/
00H
01H/
02H
ECH
Manufacturer
Code
Device Code
(K5A3280Y)
A20
～
A0(x16)/*
A20
～
A-1(x8)
DQ15
～
DQ0
F0H
Return to
Read Mode
22or
22A2H
NOTE:
The 3rd Cycle and 4th Cycle address must include the same bank address. Please refer to Table 6 for device code.
Write (Program/Erase) Mode
Flash memory executes its program/erase operations by writing commands into the command register. In order to write the com-
mands to the register, CE
F
and WE must be low and OE must be high. Addresses are latched on the falling edge of CE
F
or WE
(whichever occurs last) and the data are latched on the rising edge of CE
F
or WE (whichever occurs first). The device uses standard
microprocessor write timing.
Program
Flash memory can be programmed in units of a word or a byte. Programming is writing 0's into the memory array by executing the
Internal Program Routine. In order to perform the Internal Program Routine, a four-cycle command sequence is necessary. The first
two cycles are unlock cycles. The third cycle is assigned for the program setup command. In the last cycle, the address of the mem-
ory location and the data to be programmed at that location are written. The device automatically generates adequate program
pulses and verifies the programmed cell margin by the Internal Program Routine. During the execution of the Routine, the system is
not required to provide further controls or timings.
During the Internal Program Routine, commands written to the device will be ignored. Note that a hardware reset during a program
operation will cause data corruption at the corresponding location.
Figure 4. Program Command Sequence
WE
555H/
AAAH
2AAH/
555H
555H/
AAAH
AAH
55H
A0H
Program
Address
Program
Data
Program
Start
DQ15-DQ0
RY/BY
A20
～
A0(x16)/
A20
～
A-1(x8)
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