參數(shù)資料
型號(hào)： K4X56163PE
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x16 Mobile DDR SDRAM
中文描述： 1,600 x16移動(dòng)DDR SDRAM
文件頁(yè)數(shù)： 1/48頁(yè)
文件大小： 698K
代理商： K4X56163PE
K4X56163PE-L(F)G
March 2004
1
Mobile-DDR SDRAM
16M x16 Mobile DDR SDRAM
FEATURES
1.8V power supply, 1.8V I/O power
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Four banks operation
Differential clock inputs(CK and CK)
MRS cycle with address key programs
- CAS Latency ( 3 )
- Burst Length ( 2, 4, 8 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 array )
- Internal Temperature Compensated Self Refresh
- Driver strength ( 1, 1/2, 1/4, 1/8 )
All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
Data I/O transactions on both edges of data strobe, DM for masking.
Edge aligned data output, center aligned data input.
No DLL; CK to DQS is not synchronized.
LDM/UDM for write masking only.
7.8us auto refresh duty cycle.
CSP package.
Operating Frequency
*CL : CAS Latency
DDR200
DDR133
Speed @CL3
100Mhz
66Mhz
Column address configuration
DM is internally loaded to match DQ and DQS identically.
Organization
Row Address
Column Address
16Mx16
A0 ~ A12
A0-A8
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4X56163PE-LFG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x16 Mobile DDR SDRAM
K4X56163PE-LG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x16 Mobile DDR SDRAM
K4X56163PG 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x16 Mobile-DDR SDRAM
K4X56163PG-FGC3000 制造商:Samsung 功能描述:256MMSDDDRMOBILE DDR SDRAX16FBGA - Bulk
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