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參數(shù)資料
| 型號(hào)： | K4T51163QE |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb E-die DDR2 SDRAM Specification |
| 中文描述： | 512MB的電子芯片DDR2內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 1/45頁 |
| 文件大?。?/td> | 947K |
| 代理商： | K4T51163QE |
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Rev. 1.8 July 2007
K4T51043QE
K4T51083QE
K4T51163QE
DDR2 SDRAM
1 of 45
* Samsung Electronics reserves the right to change products or specification without notice.
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
512Mb E-die DDR2 SDRAM Specification
60FBGA & 84FBGA with Pb-Free
(RoHS compliant)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4T56043QF | OSC 3.3V SMT 7X5 CMOS |
| K4T56083QF | 256Mb F-die DDR2 SDRAM |
| K4T56083QF-GCD5 | 256Mb F-die DDR2 SDRAM |
| K4T56083QF-GCE6 | 256Mb F-die DDR2 SDRAM |
| K4T56083QF-ZCD5 | 256Mb F-die DDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4T51163QG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb G-die DDR2 SDRAM Specification |
| K4T51163QG-HCE6 | 制造商:Samsung 功能描述:IC,Memory,SDRAM,SAM,FBGA84 |
| K4T51163QG-HCE6000 | 制造商:Samsung SDI 功能描述:DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA T/R |
| K4T51163QG-HCF7000 | 制造商:SAMSG 功能描述: |
| K4T51163QG-HCLCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb G-die DDR2 SDRAM Specification |
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