- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373067 > K4S510832B-TC75 (SAMSUNG SEMICONDUCTOR CO. LTD.) 512Mb B-die SDRAM Specification PDF資料下載
參數(shù)資料
| 型號(hào)： | K4S510832B-TC75 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb B-die SDRAM Specification |
| 中文描述： | 512MB的乙芯片內(nèi)存規(guī)格 |
| 文件頁(yè)數(shù)： | 12/15頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | K4S510832B-TC75 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)當(dāng)前第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)
CMOS SDRAM
SDRAM 512Mb B-die (x4, x8, x16)
Rev. 1.1 February 2004
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Notes
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
Volts/ns
3
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
3.8
Volts/ns
3
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
5.6
Volts/ns
1,2
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
5.0
Volts/ns
1,2
1. Rise time specification based on 0pF + 50
to V
SS
, use these values to design to.
2. Fall time specification based on 0pF + 50
to V
DD
, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
SS
.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
75
Unit
Note
Min
7.5
10
Max
CLK cycle time
CAS latency=3
CAS latency=2
t
CC
1000
ns
1
CLK to valid
output delay
CAS latency=3
t
SAC
5.4
ns
1, 2
CAS latency=2
CAS latency=3
6
Output data
hold time
t
OH
3
ns
2
CAS latency=2
3
CLK high pulse width
t
CH
2.5
ns
3
CLK low pulse width
Input setup time
t
CL
t
SS
2.5
1.5
ns
ns
3
3
Input hold time
CLK to output in Low-Z
t
SH
t
SLZ
0.8
1
ns
ns
3
2
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
t
SHZ
5.4
6
ns
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S510832B-TCL75 | 512Mb B-die SDRAM Specification |
| K4S511632B-TC75 | 512Mb B-die SDRAM Specification |
| K4S511632B-TCL75 | 512Mb B-die SDRAM Specification |
| K4S510432B-UC | 512Mb B-die SDRAM Specification |
| K4S511632B-CL75 | 512Mb B-die SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S510832B-TCL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
| K4S510832B-UC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
| K4S510832D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Product Guide |
| K4S510832D-TC75000 | 制造商:Samsung Semiconductor 功能描述:512 SDRAM X8 TSOP2 - Trays |
| K4S510832D-UC75000 | 制造商:Samsung Semiconductor 功能描述:DRAM CHIP SDRAM 512MBIT 3.3V 54TSOP-II - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。