參數(shù)資料
型號: K4R441869A
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述: 256 × 16/18位× 2 * 16屬銀行直接RDRAMTM
文件頁數(shù): 60/64頁
文件大?。?/td> 4052K
代理商: K4R441869A
Page 58
Direct RDRAM
K4R271669A/K4R441869A
Rev. 1.02 Jan. 2000
Center-Bonded uBGA Package
Figure 61 shows the form and dimensions of the recom-
mended package for the center-bonded CSP device class.
Figure 61: Center-Bonded uBGA Package
Table 27 lists the numerical values corresponding to dimen-
sions shown in Figure 61.
Table 27: Center-Bonded uBGA Package Dimensions
A
B
C
D
E
F
G
H
J
1
2
3
4
5
6
7
D
A
e1
d
E
E1
8
e2
Top
Bottom
Bottom
Bottom
9
10
11
12
Symbol
Parameter
Min
(128Mb/144Mb)
Max
(128Mb/144Mb)
Unit
e1
Ball pitch (x-axis)
1.00
1.00
mm
e2
Ball pitch (y-axis)
0.80
0.80
mm
A
Package body length
11.90
12.10
mm
D
Package body width
10.10
10.30
mm
E
Package total thickness
-
1.00
a
mm
E1
Ball height
0.20
0.30
mm
d
Ball diameter
0.30
0.40
mm
a. The E,MAX parameter for SO-RIMM applications is 0.94mm.
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