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參數(shù)資料
| 型號： | K4R271669D-T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit RDRAM(D-die) |
| 中文描述： | 128Mbit的RDRAM（深模） |
| 文件頁數(shù)： | 15/20頁 |
| 文件大小： | 310K |
| 代理商： | K4R271669D-T |
Page 13
Direct RDRAM
Preliminary
Version 1.0 Dec. 2001
K4R271669D
a. MSE/MS are fields of the SKIP register. For this combination (skip
override) the tDCW parameter range is effectively 0.0 to 0.0.
b. t
S,MIN
and t
H,MIN
for other t
CYCLE
values can be interpolated
between or extrapolated from the timings at the 3 specified t
CYCLE
values.
c. With V
IL,CMOS
=0.5V
CMOS
-0.4V and V
IH,CMOS
=0.5V
CMOS
+0.4V
d. Effective hold becomes t
H4
’=t
H4
+[PDNXA
64
t
SCYCLE
+t
PD-
NXB,MAX
]-[PDNX
256
t
SCYCLE
]
if [PDNX
256
t
SCYCLE
] < [PDNXA
64
t
SCYCLE
+t
PDNXB,MAX
]. See
Figure 49.
t
CCTRL
Current control interval
34 t
CYCLE
100ms
ms/t
CY-
CLE
Figure 53
t
TEMP
Temperature control interval
100
ms
Figure 54
t
TCEN
TCE command to TCAL command
150
-
t
CYCLE
Figure 54
t
TCAL
TCAL command to quiet window
2
2
t
CYCLE
Figure 54
t
TCQUIET
Quiet window (no read data)
140
-
t
CYCLE
Figure 54
t
PAUSE
RDRAM delay (no RSL operations allowed)
200.0
μ
s
page 38
Table 11: Timing Conditions
Symbol
Parameter
Min
Max
Unit
Figure(s)
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| K4R271669D-TCS8 | 128Mbit RDRAM(D-die) |
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相關代理商/技術參數(shù) |
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|---|---|
| K4R271669D-TCS8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(D-die) |
| K4R271669E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(E-die) |
| K4R271669F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit RDRAM(F-die) |
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| K4R271669F-TCS8000 | 制造商:Samsung 功能描述:128 DIRECT RDRAM X16 WBGA - Trays |
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