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參數(shù)資料
| 型號： | K4N51163QC-ZC33 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mbit gDDR2 SDRAM |
| 中文描述： | 512MB的GDDR2 SDRAM的 |
| 文件頁數(shù)： | 54/64頁 |
| 文件大?。?/td> | 1420K |
| 代理商： | K4N51163QC-ZC33 |
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- 54 -
Rev 1.5 Oct. 2005
512M gDDR2 SDRAM
K4N51163QC-ZC
If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs
when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates
the input and output buffers, excluding CK, CK, ODT and CKE. Also the DLL is disabled upon entering precharge power-
down or slow exit active power-down, but the DLL is kept enabled during fast exit active power-down. In power-down
mode, CKE low and a stable clock signal must be maintained at the inputs of the gDDR2 SDRAM, and ODT should be in
a valid state but all other input signals are “Don’t Care”. CKE low must be maintained until tCKE has been satisfied.
Power-down duration is limited by 9 times tREFI of the device.
The power-down state is synchronously exited when CKE is registered high (along with a Nop or Deselect command).
CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be applied with power-
down exit latency, tXP, tXARD, or tXARDS, after CKE goes high. Power-down exit latency is defined at AC spec table of
this data sheet.
t
IS
t
IS
CK/CK
CKE
Command
VALID
NOP
VALID
Don’t Care
NOP
t
XP,
t
XARD,
t
XARDS
Enter Power-Down mode
t
CKE
t
IH
t
IH
t
CKE
VALID
t
IH
Exit Power-Down mode
t
IS
t
IH
t
CKE
t
IH
VALID
t
IS
V
IH
(AC)
V
IH
(DC)
V
IL
(DC)
V
IH
(AC)
V
IH
(DC)
V
IL
(AC)
V
IH
(DC)
V
IH
(AC)
Basic Power Down Entry and Exit timing diagram
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| K4N51163QC-ZC36 | 512Mbit gDDR2 SDRAM |
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| K4R271669B-N(M)CK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4N51163QC-ZC36 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mbit gDDR2 SDRAM |
| K4N51163QG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Graphic Memory |
| K4N51163QZ | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Graphic Memory |
| K4N56163QF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM |
| K4N56163QF-GC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit gDDR2 SDRAM |
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