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參數(shù)資料
| 型號(hào)： | K4N37 |
| 廠商： | KODENSHI CORP. |
| 英文描述： | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
| 中文描述： | 光耦合器（這些光電耦合器包括一個(gè)紅外線發(fā)射鎵砷化物） |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 157K |
| 代理商： | K4N37 |
Photocoupler
K
4N35
K
4N36 K4N37
3/3
Ambient Temperature T
a
(
)
Forward Current vs.
Ambient Temperature
0
-20
0
20
F
F
10
20
40
30
50
40
60 80
Collector-Emitter Voltage V
CE
(V)
Collector Current vs.
Collector-Emitter Voltage
0
2 4 6
C
C
8
10
D
C
Ambient Temperature T
a
)
0
0.001
0.01
40
20
0.1
1
80
60
100
Dark Current vs.
Ambient Temperature
Collector Power Dissipation vs.
Ambient Temperature
C
C
-20
0
50
100
150
200
250
Ambient Temperature T
a
(
)
20
0
60
40
100
80
10
20
30
40
Output
Input
Test Circuit
V
IN
R
R
L
V
O
V
CC
Waveform
10%
90%
Switching Time Test Circuit
tr
tf
T
a
=25
I
F
=30mA
I
F
=20mA
I
F
=10mA
I
F
=5mA
I
F
=1mA
V
CE
=10V
I
F
=20mA
Collector Current vs.
Ambient Temperature
I
F
=1mA
Ambient Temperature T
a
(
)
-20
0
0
40
20
60
100
10
C
C
1
I
F
=5mA
I
F
=10mA
80
C
C
Forward Current I
(mA)
Forward Current I
F
0.1
0.001
0.01
1
10
100
Collector Current vs.
Forward Current
T
a
=25
V
CE
=10V
1
0.1
10
100
1
R
r
,
f
)
0.1
Load Resistance R
L
(
)
0.1
1.0
5.0
V
CE
=10V
I
C
=2mA
T
a
=25
500
10
100
Response Time vs.
Load Resistance
tr
tf
T
a
=-55
Forward Voltage V
F
(V)
0.4
F
F
20
0
60
40
100
80
0.8
1.2
T
a
=25
T
a
=70
Forward Current vs.
Forward Voltage
1.6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4N38 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
| K4N38A | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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| K4N51163QC-ZC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mbit gDDR2 SDRAM |
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