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參數(shù)資料
| 型號： | K4N25H |
| 廠商： | KODENSHI CORP. |
| 英文描述： | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
| 中文描述： | 光耦合器（這是一鎵砷化物紅外線發(fā)射光耦cosist） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 187K |
| 代理商： | K4N25H |
Photocoupler
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25
Min.
, unless otherwise noted)
Typ.
1.15
-
I
F
=10mA
VR=5V
V=0, f=1MHz
I
C
=0.5mA
I
E
=0.1mA
I
C
=0.1mA
I
E
=0.1mA
I
F
=0, V
CE
=10V
V
CE
=0, f=1MHz
I
F
=5mA, V
CE
=5V
I
F
=5mA, I
C
=1mA
V=0, f=1MHz
RH=40~60%, V=500V
V
CC
=10V, R
L
=100
I
C
=2mA
** Except for K4N25G
*4. CTR=(I
C
/I
F
) X 100 (%)
V
nA
BV
EBO
I
CEO
6
-
-
-
-
CTR
V
CE(SAT)
C
IO
BV
CEO
BV
ECO
BV
CBO
Coupled
Rise Time
Fall Time
Condition
tf
C
T
-
30
-
50
-
-
-
3
10
11
3
-
-
10
-
-
1
-
V
K4N25G K4N25H
Parameter
-
-
Unit.
pF
V
V
V
0.4
-
-
-
-
-
Max.
1.30
10
-
-
-
-
Symbol
V
F
I
R
tr
R
IO
-
50
6
600
-
pF
%
V
pF
80
Input
Output
Forward Voltage
Reverse Current
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Base Breakdown Voltage **
Emitter-Base Breakdown Voltage **
Collector Dark Current
C
CE
Input-Output Isolation Resistance
Input-Output Capacitance
Capacitance
Current Transfer Ratio
*4
Collector-Emitter Saturation Voltage
mA
100
2/3
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|---|---|
| K4N26 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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| K4N26323AE-GC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM |
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