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參數(shù)資料
| 型號： | K4N25A |
| 廠商： | KODENSHI CORP. |
| 英文描述： | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
| 中文描述： | 光耦合器（這些光電耦合器包括一個紅外線發(fā)射鎵砷化物） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 256K |
| 代理商： | K4N25A |
Photocoupler
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25
Min.
, unless otherwise noted)
Max.
1.30
1.15
I
F
=10mA
V
R
=5V
V=0, f=1MHz
I
C
=1mA
I
E
=0.1mA
I
C
=0.1mA
I
F
=0, V
CE
=10V
V
CE
=0, f=1MHz
I
F
=10mA, V
CE
=10V
I
F
=50mA, I
C
=1mA
V=0, f=1MHz
RH=40~60%, V=500V
V
CE
=5V, R
L
=100
I
C
=2mA
*5. CTR=(I
C
/I
F
) X 100 (%)
-
10
-
-
Collector Dark Current
Capacitance
Current Transfer Ratio
*5
Collector-Emitter Saturation Voltage
I
CEO
C
CE
CTR
V
CE(SAT)
-
-
-
100
-
nA
pF
%
V
pF
Reverse Current
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
I
R
C
T
-
Collector-Base Breakdown Voltage
Input-Output Isolation Resistance
Rise Time
Fall Time
Input-Output Capacitance
C
IO
R
IO
Input
Output
Forward Voltage
V
V
V
70
-
-
-
-
-
-
Symbol
V
F
-
tr
tf
-
-
-
0.15
1
10
11
Unit.
V
pF
-
-
0.4
-
-
-
-
3
3
Typ.
K4N25 K4N25A
Parameter
-
-
35
6
30
20
10
Coupled
Condition
BV
CEO
BV
ECO
BV
CBO
2/3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4N25G | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
| K4N25H | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) |
| K4N26 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
| K4N26323AE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM |
| K4N26323AE-GC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM |
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