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參數(shù)資料
| 型號： | K4M64163PK-RG90 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| 中文描述： | 100萬× 16 × 4銀行在54FBGA移動SDRAM |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 124K |
| 代理商： | K4M64163PK-RG90 |
K4M64163PK - R(B)E/G/C/F
October 2005
5
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V
SS
= 0V, T
A
= -25
°
C ~ 85
°
C for Extended, -25
°
C ~ 70
°
C for Commercial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. It has +/-5
°
C tolerance.
4. K4M64163PK-R(B)E/C**
5. K4M64163PK-R(B)G/F**
6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
-90
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
30
30
30
mA
1
Precharge Standby Current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
0.3
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
0.3
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
6.5
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
1
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
5
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
12
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
4
mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
50
45
45
mA
1
Refresh Current
I
CC
5
t
ARFC
≥
t
ARFC
(min)
50
50
50
mA
2
Self Refresh Current
I
CC
6
CKE
≤
0.2V
TCSR
45
*3
85/70
°
C
-E/C
Full
140
220
uA
4
1/2 of
130
190
1/4 of
125
175
-G/F
Full
90
180
5
1/2 of
80
150
1/4 of
75
135
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