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參數(shù)資料
| 型號(hào)： | K4M64163PH-RBF1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| 中文描述： | 100萬× 16 × 4銀行在54CSP移動(dòng)SDRAM |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 115K |
| 代理商： | K4M64163PH-RBF1L |
K4M64163PH - R(B)G/F
December 2003
5
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V
SS
= 0V, T
A
= -25
°
C ~ 85
°
C for Extended, -25
°
C ~ 70
°
C for Commerial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
-90
-IL
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
25
25
25
mA
1
Precharge Standby Current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
0.3
mA
I
CC2
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
0.3
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
6.5
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
1
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
5
mA
I
CC3
PS
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
12
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
1
mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
60
50
50
mA
1
Refresh Current
I
CC
5
t
ARFC
≥
t
ARFC
(min)
50
50
50
mA
2
Self Refresh Current
I
CC
6
CKE
≤
0.2V
Internal TCSR
Max 40
Max 85
°
C
Full Array
90
180
uA
1/2 of Full Array
80
160
1/4 of Full Array
75
150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4M64163PH-RBF75 | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RBF90 | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF75 | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF90 | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RG | 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M64163PH-RBF75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RBF90 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
| K4M64163PH-RF90 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP |
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