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參數(shù)資料
| 型號： | K4M563233E-G |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 2米x 32Bit的× 4銀行在90FBGA移動SDRAM |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 141K |
| 代理商： | K4M563233E-G |
K4M563233E - M(E)E/N/G/C/L/F
February 2004
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : Max 40
°
C/Max 70
°
C, In extended Temp : Max 40
°
C/Max 85
°
C
4. K4M563233E-M(E)E/C**
5. K4M563233E-M(E)N/L**
6. K4M563233E-M(E)G/F**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-75/-80
-1H
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
150
150
140
mA
1
Precharge Standby Current
in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
1.2
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
1.2
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
20
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
8
mA
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
8
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
45
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
40
mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
190
160
160
mA
1
Refresh Current
I
CC
5
t
RC
≥
t
RC
(min)
320
300
290
mA
2
Self Refresh Current
I
CC
6
CKE
≤
0.2V
-E/C
2000
uA
4
-N/L
1100
5
-G/F
Internal TCSR
Max 40
Max 85/70
°
C
3
4Banks
700
1100
uA
6
2Banks
600
900
1Bank
550
800
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4M563233E-L | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-M | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-N | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-F1H | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-F1L | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M563233E-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-N | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233G | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233G-FHL/F60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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