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參數(shù)資料
| 型號： | K4M563233D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8Mx32 Mobile SDRAM 90FBGA |
| 中文描述： | 8Mx32移動SDRAM 90FBGA |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | K4M563233D |
K4M563233D-M(E)E/N/I/P
Rev. 1.1 Dec. 2002
CMOS SDRAM
GENERAL DESCRIPTION
The K4M283233D is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 2,097,152 words by 32
bits, fabricated with SAMSUNG
′
s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock and I/O transactions are possible
on every clock cycle. Range of operating frequencies, program-
mable burst lengths and programmable latencies allow the
same device to be useful for a variety of high bandwidth and
high performance memory system applications.
FEATURES
3.0V & 3.3V power supply
LVCMOS compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (1, 2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle).
Extended Temperature Operation (-25
°
C ~ 85
°
C).
Inderstrial Temperature Operation (-40
°
C ~ 85
°
C).
90Balls DDP FBGA(-MXXX -Pb, -EXXX -Pb Free).
2M x 32Bit x 4 Banks SDRAM in 90FBGA
FUNCTIONAL BLOCK DIAGRAM
ORDERING INFORMATION
- M(E)E/N ; Normal/Low Power, Temp : -25
°
C ~ 85
°
C.
- M(E)I/P ; Noraml/Low Power, Temp : -40
°
C ~ 85
°
C.
Note :
1. In case of 40MHz Frequency, CL1 can be supported.
Part No.
Max Freq.
Interface Package
K4M563233D-M(E)E/N/I/P80
125MHz(CL=3)
105MHz(CL=2)
LVCMOS
90 FBGA
Pb
(Pb Free)
K4M563233D-M(E)E/N/I/P1H 105MHz(CL=2)
K4M563233D-M(E)E/N/I/P1L 105MHz(CL=3)
*1
Bank Select
Data Input Register
2M x 32
2M x 32
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
2M x 32
2M x 32
Timing Register
* Samsung Electronics reserves the right to change products or specification without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4M563233E | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-C | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-E | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-G | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-L | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M563233E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-F1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-F1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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