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參數(shù)資料
| 型號(hào)： | K4M56163PE-RG |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| 中文描述： | 4米× 16 × 4銀行在54FBGA移動(dòng)SDRAM |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 112K |
| 代理商： | K4M56163PE-RG |
K4M56163PE - R(B)G/F
February 2004
Mobile-SDRAM
1.8V
13.9K
10.6K
Output
30pF
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
Vtt=0.5 x VDDQ
50
Output
30pF
Z0=50
Figure 2. AC Output Load Circuit
Figure 1. DC Output Load Circuit
AC OPERATING TEST CONDITIONS
(V
DD
= 1.7V ~1.95V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
Parameter
Value
Unit
AC input levels (Vih/Vil)
0.9 x V
DDQ
/ 0.2
V
Input timing measurement reference level
0.5 x V
DDQ
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
0.5 x V
DDQ
V
Output load condition
See Figure 2
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| K4M56163PG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BC1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BC90 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BE1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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