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參數(shù)資料
| 型號： | K4M56163PE-F90 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| 中文描述： | 4米× 16 × 4銀行在54FBGA移動SDRAM |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 112K |
| 代理商： | K4M56163PE-F90 |
K4M56163PE - R(B)G/F
February 2004
Mobile-SDRAM
1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation.
Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
-. DS (Driver Strength)
DQM for masking.
Auto refresh.
64ms refresh period (8K cycle).
Commercial Temperature Operation (-25
°
C ~ 70
°
C).
Extended Temperature Operation (-25
°
C ~ 85
°
C).
54Balls FBGA with 0.8mm ball pitch
( -RXXX : Leaded, -BXXX : Lead Free).
FEATURES
The K4M56163PE is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design make a device controlled precisely
with the use of system clock and I/O transactions are possible
on every clock cycle. The range of operating frequencies, pro-
grammable burst lengths and programmable latencies allow the
same device to be useful for a variety of high bandwidth and
high performance memory system applications.
GENERAL DESCRIPTION
ORDERING INFORMATION
- R(B)G : Low Power, Extended Temperature(-25
°
C ~ 85
°
C)
- R(B)F : Low Power, Commercial Temperature(-25
°
C ~ 70
°
C)
Notes :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific
purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Part No.
Max Freq.
Interface
Package
K4M56163PE-R(B)G/F90
111MHz(CL=3), 83MHz(CL=2)
LVCMOS
54 FBGA
Leaded (Lead Free)
K4M56163PE-R(B)G/F1L
105MHz(CL=3), 66MHz(CL=2)
*1
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
相關PDF資料 |
PDF描述 |
|---|---|
| K4M56163PE-R | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PE-RG | 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M563233D | 8Mx32 Mobile SDRAM 90FBGA |
| K4M563233E | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4M563233E-C | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M56163PE-R | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PE-RG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BC1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M56163PG-BC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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