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參數(shù)資料
| 型號(hào)： | K4F660811B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 8米× 8位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁面模式 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 367K |
| 代理商： | K4F660811B |
CMOS DRAM
K4F660811B,K4F640811B
This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), package type (SOJ or TSOP-II) are optional fea-
tures of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 Fast
Page Mode DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high band-width, low power consumption
and high reliability.
Fast Page Mode operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Fast parallel test mode capability
TTL(5.0V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic SOJ and TSOP(II) packages
+5.0V
±
10% power supply
Control
Clocks
RAS
CAS
W
Vcc
Vss
A0~A12
(A0~A11)*1
A0~A9
(A0~A10)*1
Memory Array
8,388,608 x 8
Cells
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
8M x 8bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
S
DQ0
to
DQ7
Data out
Buffer
Data in
Buffer
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
OE
Part Identification
- K4F660811B-JC(5.0V, 8K Ref.)
- K4F640811B-JC(5.0V, 4K Ref.)
- K4F660811B-TC(5.0V, 8K Ref.)
- K4F640811B-TC(5.0V, 4K Ref.)
FEATURES
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
K4F660811B*
K4F640811B
8K
4K
64ms
Performance Range
Speed
-45
-50
-60
t
RAC
45ns
50ns
60ns
t
CAC
12ns
13ns
15ns
t
RC
80ns
90ns
110ns
t
PC
31ns
35ns
40ns
Active Power Dissipation
Speed
-45
-50
-60
8K
550
495
440
4K
715
660
605
Unit : mW
*
Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4F640812D | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F660812D | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F641612C-TL50 | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F641612C-L | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F641612C-TC | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4F660812D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612B-TC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| K4F661612C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
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