參數(shù)資料
型號: K4E660412E-TI45
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M x 4bit CMOS Dynamic RAM with Extended Data Out
中文描述: 16米x 4位的CMOS動態(tài)隨機(jī)存儲器的擴(kuò)展數(shù)據(jù)輸出
文件頁數(shù): 15/21頁
文件大?。?/td> 192K
代理商: K4E660412E-TI45
CMOS DRAM
K4E660412E,K4E640412E
Industrial Temperature
Don
t care
HYPER PAGE READ-MODIFY-WRITE CYCLE
Undefined
RAS
V
IH
-
V
IL
-
CAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
OE
V
IH
-
V
IL
-
V
I/OH
-
V
I/OL
-
ROW
ADDR
t
CSH
t
RASP
t
RP
t
ASR
t
RCD
t
CP
t
RAD
t
CAH
t
WP
t
DH
COL.
ADDR
COL.
ADDR
t
CAS
t
CAS
t
CRP
t
ASC
t
CAH
t
RAL
t
RCS
t
CWL
t
CWD
t
AWD
t
RWD
t
WP
t
CWD
t
AWD
t
CWL
t
RAC
t
OEA
t
CLZ
t
OEZ
t
CPWD
t
OED
t
ASC
t
CLZ
t
OEA
t
CAC
t
AA
t
DH
t
OED
t
RWL
t
CRP
t
DS
t
OEZ
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
t
DS
DQ0 ~ DQ3(7)
t
RSH
t
OLZ
t
OLZ
t
HPRWC
t
CAC
t
AA
t
RAH
相關(guān)PDF資料
PDF描述
K4E640412E-TI45 16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640412E 16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640412E-JI45 16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E640412E-JI50 16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660412E 16M x 4bit CMOS Dynamic RAM with Extended Data Out
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4E660412E-TI50 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660412E-TI60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660412E-TP45 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660412E-TP50 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E660412E-TP60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out