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參數(shù)資料
| 型號： | K4E640412E-TI45 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 16米x 4位的CMOS動態(tài)隨機存儲器的擴展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 6/21頁 |
| 文件大?。?/td> | 192K |
| 代理商： | K4E640412E-TI45 |
CMOS DRAM
K4E660412E,K4E640412E
Industrial Temperature
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-45
-50
-60
Units
Note
Min
Max
Min
Max
Min
Max
Data hold time
t
DH
7
7
10
ns
9
Refresh period (Normal)
t
REF
t
REF
64
64
64
ms
Refresh period (L-ver)
128
128
128
ms
Write command set-up time
t
WCS
t
CWD
0
0
0
ns
7
CAS to W delay time
24
27
32
ns
7
RAS to W delay time
t
RWD
t
AWD
t
CSR
57
64
77
ns
7
Column address to W delay time
35
39
47
ns
7
CAS set-up time (CAS -before-RAS refresh)
5
5
5
ns
CAS hold time (CAS -before-RAS refresh)
t
CHR
t
RPC
10
10
10
ns
RAS to CAS precharge time
5
5
5
ns
Access time from CAS precharge
t
CPA
t
HPC
24
28
35
ns
3
Hyper Page cycle time
17
20
25
ns
14
Hyper Page read-modify-write cycle time
t
HPRWC
t
CP
47
47
56
ns
14
CAS precharge time (Hyper page cycle)
6.5
7
10
ns
RAS pulse width (Hyper page cycle)
t
RASP
t
RHCP
45
200K
50
200K
60
200K
ns
RAS hold time from CAS precharge
24
30
35
ns
OE access time
t
OEA
t
OED
12
13
15
ns
3
OE to data delay
8
10
13
ns
CAS precharge to W delay time
t
CPWD
t
OEZ
36
41
52
ns
Output buffer turn off delay time from OE
3
11
3
13
3
13
ns
6
OE command hold time
t
OEH
t
WTS
t
WTH
5
5
5
ns
Write command set-up time (Test mode in)
10
10
10
ns
11
Write command hold time (Test mode in)
10
10
10
ns
11
W to RAS precharge time (C-B-R refresh)
t
WRP
t
WRH
10
10
10
ns
W to RAS hold time (C-B-R refresh)
10
10
10
ns
Output data hold time
t
DOH
t
REZ
4
5
5
ns
Output buffer turn off delay from RAS
3
13
3
13
3
13
ns
6,13
Output buffer turn off delay from W
t
WEZ
t
WED
3
13
3
13
3
13
ns
6
W to data delay
8
15
15
ns
OE to CAS hold time
t
OCH
t
CHO
5
5
5
ns
CAS hold time to OE
5
5
5
ns
OE precharge time
t
OEP
t
WPE
5
5
5
ns
W pulse width (Hyper Page Cycle)
5
5
5
ns
RAS pulse width (C-B-R self refresh)
t
RASS
t
RPS
100
100
100
us
15,16,17
RAS precharge time (C-B-R self refresh)
74
90
110
ns
15,16,17
CAS hold time (C-B-R self refresh)
t
CHS
-50
-50
-50
ns
15,16,17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E640412E | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JI45 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JI50 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E-JI45 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E640412E-TI50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-TI60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-TP45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-TP50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-TP60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
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