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參數(shù)資料
CMOS DRAM
K4E660412E,K4E640412E
Industrial Temperature
t
CRP
t
WCS
t
RP
RAS
V
IH
-
V
IL
-
A
V
IH
-
V
IL
-
W
V
IH
-
V
IL
-
OE
V
IH
-
V
IL
-
ROW
ADDRESS
t
RAS
t
RC
t
RAD
t
ASR
t
RAH
t
ASC
Don
′
t care
HIDDEN REFRESH CYCLE ( WRITE )
Undefined
CAS
V
IH
-
V
IL
-
V
IH
-
V
IL
-
DQ0 ~ DQ3(7)
t
RSH
t
RCD
t
WRH
COLUMN
ADDRESS
t
RAS
t
RC
t
CHR
t
CAH
t
WRP
t
DS
NOTE : D
OUT
= OPEN
t
WP
t
WCH
DATA-IN
t
DH
t
RP
t
RAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4E640412E-JI50 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E-JI45 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E-JI50 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E660412E-JI60 | 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4E640412E-JI50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JI60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JP45 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JP50 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
| K4E640412E-JP60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 4bit CMOS Dynamic RAM with Extended Data Out |
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