參數(shù)資料
型號(hào): JTXV1N6118A
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 113K
代理商: JTXV1N6118A
1N6102A
Thru
1N6137A
TEL:805-498-2111 FAX:805-498-3804
1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
QPL
500 Watt Axial Leaded TVS
AMBIENT TEMPERATURE (TA) IN degC
MAX. POWER (W)
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
120
140
160
180
100
60
40
20
0
Pulse conditions as
defined by 10 X 1000us
0
40
80
120
160
200
Pp or
Ipp in %
of max
ratings
Tj (oC)
impulse waveform
A
D
B
C
NOTE
N
DIM
MAX
MIN
MAX
MIN
INCHES
MM
DIMENSIONS
A
B
C
D
2
0.140
1.300
1.00
0.026
0.033
0.66
0.84
0.085
2.1
3.6
25.4
33.0
0.245
0.140
3.5
6.3
NOTES :
1. Controlling dimension is inches.
2. Includes uncontrolled area of device leads.
PEAK PULSE POWER vs. PULSE TIME
10x1000s IMPULSE WAVEFORM
PULSE DERATING CURVE
STEADY STATE DERATING CHARACTERISTICS
FOR FREE AIR MOUNTING
MECHANICAL OUTLINE
SCHEMATIC
0.1
1
10
100
0.1
1
10
100
1000
10000
Pulse Duration (us)
Ppp
-
Peak
Pulse
Power
(kW)
相關(guān)PDF資料
PDF描述
JTXV1N6104A 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
JTX1N6112 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
JTX1N6114A 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
JTX1N6116A 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
JTXV1N6112 500 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JTXV1N754A-1 制造商:Microsemi Corporation 功能描述:Diode Zener Single 6.8V 5% 480mW 2-Pin DO-35
JTXV2N2219A 制造商:All American Misc. 功能描述: 制造商:Microsemi Corporation 功能描述:
JTXV2N2907A 制造商: 功能描述: 制造商:Microwave Semiconductor 功能描述: 制造商:undefined 功能描述:
JTXV2N5115 HSD 制造商:All American Misc. 功能描述:
JTXV2N5663 制造商: 功能描述: