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參數(shù)資料
| 型號(hào)： | JTDA50 |
| 英文描述： | TRANSISTOR | BJT | NPN | 7A I(C) | FO-91VAR |
| 中文描述： | 晶體管|晶體管|叩| 7A條一（c）|佛91VAR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 25K |
| 代理商： | JTDA50 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
JTDA 50
50 Watts, 36 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The JTDA 50 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 960-1215 MHz. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55AT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 220 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage 55 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 7.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
SEE NOTE BELOW
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 36 Volts
PW = 10
μ
sec
DF = 20%
F = 1090 MHz
50
7.0
40
10
10:1
Watts
Watts
dB
%
BVebo
BVces
Cob
h
FE
θ
jc
2
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Emitter to Base Breakdown
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 25 mA
Ic = 25 mA
Vcb = 36V
Ic = 750 mA, Vce = 5 V
3.5
55
20
100
0.8
Volts
Volts
C/W
o
Case Outline Note: During 1995 Ghz will be converting the 55AT style flange to the version using a slot in the
mounting area, refer to 55AW.
Issue June, 1996
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JTDA50-2 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:50 Watts, 36 Volts, 960 - 1215 MHz |
| JTDB25 | 制造商:Microsemi Corporation 功能描述:LDMOS TRANSISTOR - Bulk |
| JTDB75 | 制造商:Microsemi Corporation 功能描述:LDMOS TRANSISTOR - Bulk |
| JTDE0160DIE8 | 制造商:STMicroelectronics 功能描述: |
| JTDE1708DIE8 | 制造商:STMicroelectronics 功能描述: |
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