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參數(shù)資料
| 型號： | JDV3S25CT |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 5.805 pF, 10 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1S1A, CST3, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 112K |
| 代理商： | JDV3S25CT |
JDV3S25CT
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV3S25CT
VCO for UHF Band Radio
High capacitance ratio: C1V/C4V = 2.9 (typ.)
Low series resistance: rs = 0.47 (typ.)
This device is suitable for use in small tuners.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 5 V
1
nA
C1V
VR = 1 V, f = 1 MHz
5.62
5.99
Capacitance
C4V
VR = 4 V, f = 1 MHz
1.91
2.12
pF
Capacitance ratio
C1V/C4V
2.77
2.98
Series resistance
rs
VR = 1 V, f = 470 MHz
0.47
0.62
Ω
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Unit: mm
1.Anode
2.NC
3.Cathode
JEDEC
―
JEITA
―
TOSHIBA
1-1S1A
Weight: 0.00075 g (typ.)
2
1
3
6 3
３
１２
0.
2
5±
0
.03
1.
0±
0.
05
0.
6
5
0.35
0.15±0.03
0.
25±
0
.03
0.5±0.03
0.6±0.05
0.
38
+0
.02
-0
.03
0.05±0.03
0.
05
±
0
.03
CST3
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