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參數(shù)資料
| 型號(hào)： | JDV2S14E |
| 元件分類(lèi)： | 變?nèi)荻O管 |
| 英文描述： | SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1G1A, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | JDV2S14E |
JDV2S14E
2002-01-23
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S14E
Useful for VCO/TCXO
Small Package
High Capacitance Ratio: C1V/C2.5V = 2.15 (typ.)
Low Series Resistance : rs = 0.4 (typ.)
Maximum Ratings (Ta
==== 25°C)
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C0.5V
VR = 0.5 V, f = 1 MHz
56.3
64.7
C1V
VR = 1 V, f = 1 MHz
44
49.5
C2.5V
VR = 2.5 V, f = 1 MHz
19
26.5
Capacitance
C4V
VR = 4 V, f = 1 MHz
9.2
12
pF
C0.5V/C1V
1.25
1.35
Capacitance ratio
C1V/C2.5V
1.99
2.15
2.3
Series resistance
rs
VR = 4 V, f = 100 MHz
0.4
0.8
Note: Signal level when capacitance is measured. Vsig = 500 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
F H
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