
JDV2S06S
2001-01-09
1/2
TOSHIBA DIODE
Silicon Epitaxial Planar Type
J D V 2 S 0 6 S
VCO for UHF Band Radio
High Capacitance Ratio: C1V/C4V = 2.0 (typ.)
Low Series Resistance : rs = 0.27 (typ.)
This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta
==== 25°C)
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
15
16
17
Capacitance
C4V
VR = 4 V, f = 1 MHz
7.0
8.0
8.5
pF
Capacitance ratio
C1V/C4V
1.8
2.0
Series resistance
rs
VR = 1 V, f = 470 MHz
0.27
0.45
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
Marking
Weight: 0.0011 g
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
A
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can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
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000707EAA2