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參數(shù)資料
| 型號(hào)： | JDV2S01E |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 3.15 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1G1A, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | JDV2S01E |
JDV2S01E
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
VCO for UHF band
Small Package
High Capacitance Ratio: C1V/C4V = 2.0 (typ.)
Low Series Resistance: rs = 0.5 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 μA
10
V
Reverse current
IR
VR = 10 V
3
nA
C1V
VR = 1 V, f = 1 MHz
2.85
3.15
3.45
Capacitance
C4V
VR = 4 V, f = 1 MHz
1.35
1.57
1.81
pF
Capacitance ratio
C1V/C4V
1.8
2
Series resistance
rs
VR = 1 V, f = 470 MHz
0.5
0.7
Ω
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
F A
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